US 12,261,039 B2
Method of linearized film oxidation growth
Christopher S. Olsen, Fremont, CA (US); and Tobin Kaufman-Osborn, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 16, 2023, as Appl. No. 18/185,205.
Application 18/185,205 is a continuation of application No. 17/169,866, filed on Feb. 8, 2021, granted, now 11,610,776.
Prior Publication US 2023/0223250 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H10B 41/50 (2023.01); H10B 43/50 (2023.01)
CPC H01L 21/0228 (2013.01) [H01L 21/022 (2013.01); H01L 21/02274 (2013.01); H01L 21/02293 (2013.01); H10B 41/50 (2023.02); H10B 43/50 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming an oxide layer on a substrate comprising:
determining a total growth coefficient for forming the oxide layer based on a predetermined total thickness of the oxide layer;
determining a number of sub-operations and corresponding growth coefficients to achieve the predetermined total thickness of the oxide layer, the corresponding growth coefficients determined by the total growth coefficient divided by the number of sub-operations; and
controlling a kinetic rate related to each of the corresponding growth coefficients by at least one of controlling a ramp temperature or adjusting a soak time of the substrate exposed to an oxygen percentage of a gas mixture in each of the sub-operations.