US 12,261,038 B2
Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
Hu Kang, Tualatin, OR (US); Shankar Swaminathan, Beaverton, OR (US); Jun Qian, Sherwood, OR (US); Wanki Kim, Portland, OR (US); Dennis M. Hausmann, Lake Oswego, OR (US); Bart J. van Schravendijk, Palo Alto, CA (US); and Adrien LaVoie, Newberg, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Sep. 2, 2021, as Appl. No. 17/465,555.
Application 15/654,186 is a division of application No. 14/987,542, filed on Jan. 4, 2016, granted, now 9,793,110, issued on Oct. 17, 2017.
Application 17/465,555 is a continuation of application No. 16/428,067, filed on May 31, 2019, granted, now 11,133,180.
Application 16/428,067 is a continuation of application No. 15/654,186, filed on Jul. 19, 2017, granted, now 10,361,076, issued on Jul. 23, 2019.
Application 14/987,542 is a continuation of application No. 14/137,860, filed on Dec. 20, 2013, granted, now 9,257,274, issued on Feb. 9, 2016.
Application 14/137,860 is a continuation in part of application No. 13/084,399, filed on Apr. 11, 2011, granted, now 8,728,956, issued on May 20, 2014.
Claims priority of provisional application 61/884,923, filed on Sep. 30, 2013.
Claims priority of provisional application 61/417,807, filed on Nov. 29, 2010.
Claims priority of provisional application 61/379,081, filed on Sep. 1, 2010.
Claims priority of provisional application 61/372,367, filed on Aug. 10, 2010.
Claims priority of provisional application 61/324,710, filed on Apr. 15, 2010.
Prior Publication US 2022/0059348 A1, Feb. 24, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/67 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01)
CPC H01L 21/02274 (2013.01) [C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45523 (2013.01); C23C 16/4554 (2013.01); C23C 16/56 (2013.01); H01L 21/02164 (2013.01); H01L 21/022 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/0228 (2013.01); H01L 21/67201 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/76837 (2013.01); H01L 21/28562 (2013.01); H01L 21/76826 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of filling a gap on a semiconductor substrate with a dielectric material, comprising:
depositing a first silicon-containing film in the gap through a plasma enhanced atomic layer deposition (PEALD) surface reaction using an aminosilane and a co-reactant; and
depositing additional silicon-containing film on the first silicon-containing film through a plasma enhanced chemical vapor deposition (PECVD) gas-phase reaction.