| CPC H01L 21/02181 (2013.01) [H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01)] | 17 Claims |
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1. A method of depositing a film, the method comprising:
a first deposition cycle comprising:
exposing a substrate in a processing chamber to a hafnium precursor to deposit a hafnium-containing monolayer,
purging the processing chamber of the hafnium precursor,
exposing the substrate to a first oxidant to react with the hafnium-containing monolayer to form a hafnium oxide monolayer,
purging the processing chamber of the first oxidant;
a second deposition cycle comprising:
exposing the substrate in a processing chamber to a hafnium precursor to deposit a second hafnium-containing monolayer on the hafnium oxide monolayer,
purging the processing chamber of the hafnium precursor;
exposing the substrate to a dopant precursor to deposit a dopant-containing layer on the substrate with the second hafnium-containing monolayer, the dopant-containing layer having a dopant concentration less than 100% dopant,
purging the processing chamber of the dopant precursor,
exposing the substrate to a second oxidant to react with the second hafnium-containing monolayer and the dopant-containing layer to form a doped hafnium oxide film on the substrate, and
purging the processing chamber of the second oxidant; and
repeating one or more of the first deposition cycle or the second deposition cycle so that the doped hafnium oxide film has a thickness in a range of from 0.5 nm to 10 nm, has less than or equal to 150 total monolayers, wherein the dopant concentration is changed in each monolayer and is adjustable in increments of 1.5 mol % so that the doped hafnium oxide film has a dopant concentration in a range of about 1.5 mol % to about 9 mol %.
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