| CPC H01J 37/32642 (2013.01) [H01J 37/32724 (2013.01); H01L 21/68735 (2013.01); H01L 21/68742 (2013.01); H01J 2237/002 (2013.01); H01J 2237/20235 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01); H01L 21/6833 (2013.01)] | 12 Claims |

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1. A method for processing a substrate with a plasma processing apparatus, the plasma processing apparatus including:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber, the substrate support including an electrostatic chuck, the electrostatic chuck having a central portion and a peripheral portion surrounding the central portion, the peripheral portion of the electrostatic chuck having a plurality of first through-holes;
a first ring disposed on the peripheral portion of the electrostatic chuck, the first ring having an inner portion, an intermediate portion and an outer portion, the intermediate portion having a plurality of second through-holes;
a second ring disposed on the intermediate portion of the first ring, a radially outer edge of the second ring being surrounded by the outer portion of the first ring;
a plurality of lift pins respectively extending through the plurality of first through-holes and the plurality of second through-holes; and
one or more shift mechanisms including one or more drivers to vertically shift the plurality of lift pins,
the method comprising:
vertically shifting the plurality of lift pins with a first vertical shift to adjust an upper surface of the second ring in response to consumption of the second ring; and
vertically shifting the plurality of lift pins with a second vertical shift longer than the first vertical shift to transfer and replace the second ring, wherein the first vertical shift has a driving precision of 0.02 mm and the second vertical shift has a driving precision of 0.1 mm.
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