US 12,261,027 B2
Plasma processing apparatus and plasma processing method
Natsumi Torii, Miyagi (JP); Koichi Nagami, Miyagi (JP); Chishio Koshimizu, Miyagi (JP); and Jun Abe, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 15, 2022, as Appl. No. 17/945,353.
Claims priority of application No. 2021-150027 (JP), filed on Sep. 15, 2021; and application No. 2022-134831 (JP), filed on Aug. 26, 2022.
Prior Publication US 2023/0078135 A1, Mar. 16, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32642 (2013.01) [H01J 37/32128 (2013.01); H01J 37/32174 (2013.01); H01J 37/32697 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/24585 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A plasma processing apparatus configured to perform plasma processing on a substrate, comprising:
a chamber;
a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck;
a Radio Frequency (RF) power supply configured to supply RF power to the chamber so as to generate plasma from gases in the chamber;
a DC power supply configured to apply a negative DC voltage to the edge ring;
at least one waveform control element configured to control the application of the negative DC voltage by the DC power supply; and
a controller configured to control the RF power supply and a control parameter of the at least one waveform control element in a coordinated manner so as to control a time taken for the negative DC voltage to reach a desired value.
 
19. A plasma processing method configured to perform plasma processing on a substrate using a plasma processing apparatus,
the plasma processing apparatus comprising:
a chamber;
a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck;
a Radio Frequency (RF) power supply configured to supply RF power to the chamber so as to generate plasma from gases in the chamber;
a DC power supply configured to apply a negative DC voltage to the edge ring;
at least one waveform control element configured to control the application of the negative DC voltage by the DC power supply; and
a controller configured to control the RF power supply and the at least one waveform control element,
the plasma processing method comprising:
controlling the RF power supply and a control parameter of the at least one waveform control element in a coordinated manner so as to control a time taken for the negative DC voltage to reach a desired value.