US 12,261,026 B2
Method and apparatus for revitalizing plasma processing tools
Chi-Hsing Lin, Hsinchu (TW); Chen-Fon Chang, Hsinchu (TW); Chun-Yi Wu, Hsinchu (TW); Shi-Yu Ke, Hsinchu (TW); and Chih-Teng Liao, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Mar. 31, 2021, as Appl. No. 17/219,181.
Prior Publication US 2022/0319814 A1, Oct. 6, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 16/52 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32477 (2013.01) [C23C 16/52 (2013.01); H01J 37/32972 (2013.01); H01L 21/67069 (2013.01); H01L 21/67253 (2013.01); H01L 22/20 (2013.01); H01J 2237/0225 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/2445 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor wafer, comprising:
disposing a wafer holding tool having a surface coating within a chamber of a plasma processing apparatus;
initiating a semiconductor wafer manufacturing process;
detecting, by a sensor, a presence of an airborne contaminant within the chamber, the airborne contaminant originating from a peeling weakness surface (PWS) on the surface coating;
halting the semiconductor wafer manufacturing process; and
initiating a revitalizing process that removes a depth of the PWS from the surface coating.