US 12,261,024 B2
Plasma processing apparatus and cleaning method
Wataru Shimizu, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Dec. 23, 2021, as Appl. No. 17/645,765.
Claims priority of application No. 2020-217258 (JP), filed on Dec. 25, 2020.
Prior Publication US 2022/0208524 A1, Jun. 30, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32082 (2013.01); H01J 37/32568 (2013.01); H01J 37/32862 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A plasma processing apparatus, comprising:
a chamber;
an electrode disposed within the chamber;
multiple gas discharge ports provided at an insulating member surrounding the electrode and disposed to surround the electrode while being spaced apart from each other along an entire circumference of the electrode to discharge a gas toward a center side of the electrode;
a gas supply configured to supply a processing gas to the multiple gas discharge ports;
a radio frequency power supply configured to supply a radio frequency power to the electrode to excite the processing gas into plasma; and
a controller configured to control the radio frequency power supply to supply the radio frequency power to the electrode while controlling the gas supply to supply the processing gas, such that the processing gas is discharged from the multiple gas discharge ports in a manner where the gas discharge ports through which the processing gas is discharged are switched along the circumference of the electrode.