US 12,261,022 B2
Semiconductor process apparatus and plasma ignition method
Jing Yang, Beijing (CN); Chenyu Zhong, Beijing (CN); and Gang Wei, Beijing (CN)
Assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Appl. No. 18/254,055
Filed by BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
PCT Filed Nov. 23, 2021, PCT No. PCT/CN2021/132228
§ 371(c)(1), (2) Date May 23, 2023,
PCT Pub. No. WO2022/111427, PCT Pub. Date Jun. 2, 2022.
Claims priority of application No. 202011336795.5 (CN), filed on Nov. 25, 2020.
Prior Publication US 2023/0411120 A1, Dec. 21, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32183 (2013.01) [H01J 37/32577 (2013.01); H01J 37/32935 (2013.01); H01J 2237/334 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor process apparatus, comprising:
a reaction chamber;
an air inlet assembly configured to introduce a reaction gas into the reaction chamber;
an upper electrode assembly configured to excite the reactive gas into a plasma, the upper electrode assembly including a first radio frequency (RF) power supply, a first matching device and an RF coil;
a monitor configured to monitor an electromagnetic radiation intensity of the plasma in the reaction chamber when the plasma is ignited; and
a controller configured to determine whether the electromagnetic radiation intensity monitored by the monitor reaches a preset intensity, in response to the electromagnetic radiation intensity monitored by the monitor reaching the preset intensity, determine that plasma ignition is successful, and after the plasma ignition is successful, control the upper electrode assembly to perform impedance matching of a first preset duration, the first preset duration being a fixed value, which is greater than or equal to a maximum duration required to complete the impedance matching, the maximum duration being a maximum value of durations required for the upper electrode assembly to adjust a reflected power to a range smaller than a target reflected power.
 
11. A semiconductor process apparatus, comprising:
a reaction chamber;
an air inlet assembly configured to introduce a reaction gas into the reaction chamber;
an upper electrode assembly configured to excite the reactive gas into a plasma, the upper electrode assembly including a first radio frequency (RF) power supply, a first matching device and an RF coil;
a monitor configured to monitor an electromagnetic radiation intensity of the plasma in the reaction chamber when the plasma is ignited;
a controller configured to determine whether the electromagnetic radiation intensity monitored by the monitor reaches a preset intensity, in response to the electromagnetic radiation intensity monitored by the monitor reaching the preset intensity, determine that plasma ignition is successful, and after the plasma ignition is successful, control the upper electrode assembly to perform impedance matching of a first preset duration, the first preset duration being a fixed value, which is greater than or equal to a duration required to complete the impedance matching; and
a lower electrode assembly configured to apply a radio frequency (RF) bias voltage to a chuck in the reaction chamber, the lower electrode assembly including a second RF power supply and a second matching device.