US 12,261,021 B2
Apparatus and method for treating substrate
Hyun Bae Kim, Yongin-si (KR); Ji Hwan Kim, Hwaseong-si (KR); Hyong Seo Yoon, Suwon-si (KR); Sang Ki Nam, Seongnam-si (KR); Hyun Jae Lee, Seongnam-si (KR); and Myung Geun Jeong, Yongin-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 13, 2022, as Appl. No. 17/719,680.
Claims priority of application No. 10-2021-0118739 (KR), filed on Sep. 7, 2021.
Prior Publication US 2023/0072243 A1, Mar. 9, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32146 (2013.01) [H01J 37/32183 (2013.01); H01J 37/32568 (2013.01); H01J 37/3211 (2013.01); H01J 2237/334 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An apparatus for treating a substrate, the apparatus comprising:
a chamber;
a lower electrode in the chamber, wherein the substrate is configured to be on the lower electrode;
an upper electrode above the lower electrode;
a pulse signal generator configured to generate a pulse signal; and
a bias power supply configured to
generate bias power having a pulsed non-sinusoidal waveform using the pulse signal, and
supply the generated bias power to the lower electrode,
wherein the bias power supply includes
a DC power generator configured to
receive the pulse signal and
generate a direct-current (DC) voltage subjected to feedforward compensation based on the pulse signal; and
a modulator configured to
generate a power signal having a non-sinusoidal waveform using the DC voltage, and
filter the power signal using the pulse signal to generate the bias power having the pulsed non-sinusoidal waveform.