US 12,261,020 B2
Plasma processing apparatus and plasma processing method
Takahiro Takeuchi, Miyagi (JP); and Ken Kobayashi, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Sep. 14, 2021, as Appl. No. 17/474,530.
Claims priority of application No. 2020-154149 (JP), filed on Sep. 14, 2020.
Prior Publication US 2022/0084788 A1, Mar. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32146 (2013.01) [H01J 37/32183 (2013.01); H01J 2237/334 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a chamber;
a first matching circuit coupled to the chamber;
a second matching circuit coupled to the chamber;
a first RF generator coupled to the first matching circuit, and configured to generate a first RF pulsed signal including a plurality of pulse cycles, each pulse cycle including a first period, a second period, and a third period, the first RF pulsed signal having a first power level in the first period, a second power level in the second period, and a third power level in the third period, and the first period being 30 μs or less;
a second RF generator coupled to the second matching circuit, and configured to generate a second RF pulsed signal including the plurality of pulse cycles, the second RF pulsed signal having a frequency lower than a frequency of the first RF pulsed signal and having a fourth power level in the first period and a fifth power level in at least one of the second period and the third period; and
a third RF generator coupled to the second matching circuit, and configured to generate a third RF pulsed signal including the plurality of pulse cycles, the third RF pulsed signal having a frequency lower than the frequency of the second RF pulsed signal and having a sixth power level in the second period and a seventh power level in at least one of the first period and the third period.