US 12,261,017 B2
Resonant antenna for physical vapor deposition applications
Barton Lane, Tokyo (JP); and Masaki Takagi, Tokyo (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 21, 2022, as Appl. No. 17/971,394.
Prior Publication US 2024/0136151 A1, Apr. 25, 2024
Prior Publication US 2024/0234089 A9, Jul. 11, 2024
Int. Cl. H01J 37/32 (2006.01); C23C 14/35 (2006.01); H01L 21/02 (2006.01); H01Q 5/10 (2015.01)
CPC H01J 37/3211 (2013.01) [C23C 14/354 (2013.01); H01L 21/0228 (2013.01); H01Q 5/10 (2015.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a vacuum chamber for physical vapor deposition (PVD);
a target located within the vacuum chamber for sputtering a material onto a wafer; and
a resonant structure formed by an antenna and a plurality of capacitors, wherein the antenna of the resonant structure is coplanar with a top surface of the target and the resonant structure is configured to:
provide a pulsed output at a resonant frequency of the resonant structure; and
generate, via the antenna and based on the pulsed output, a plasma between the target and a location of the wafer to ionize the material sputtered from the target.