US 12,261,012 B2
Plasma treatment apparatus, lower electrode assembly and forming method thereof
Tuqiang Ni, Shanghai (CN); Sheng Guo, Shanghai (CN); Xiang Sun, Shanghai (CN); Guangwei Fan, Shanghai (CN); Kuan Yang, Shanghai (CN); Hongqing Wang, Shanghai (CN); Xingjian Chen, Shanghai (CN); and Ruoxin Du, Shanghai (CN)
Assigned to ADVANCED MICRO-FABRICATION EQUIPMENT INC., Shanghai (CN)
Filed by ADVANCED MICRO-FABRICATION EQUIPMENT INC. CHINA, Shanghai (CN)
Filed on Feb. 24, 2022, as Appl. No. 17/680,225.
Claims priority of application No. 202110466298.5 (CN), filed on Apr. 28, 2021.
Prior Publication US 2022/0351933 A1, Nov. 3, 2022
Int. Cl. H01J 37/32 (2006.01); H01J 37/04 (2006.01); H01J 37/305 (2006.01); H01L 21/3065 (2006.01)
CPC H01J 37/04 (2013.01) [H01J 37/3053 (2013.01); H01J 37/32091 (2013.01); H01J 37/32642 (2013.01); H01L 21/3065 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A lower electrode assembly, comprising:
a base for carrying a substrate to be treated wherein the base comprises a platform portion and a step portion positioned at a periphery of the platform portion;
a focus ring encircling a periphery of the base;
a coupling loop disposed below the focus ring;
a conductive layer disposed in the coupling loop;
a wire for electrically connecting the conductive layer and the base so that the base and the conductive layer are equipotential; and
wherein the coupling loop comprises a first coupling portion opposite a side wall of the platform portion and a second coupling portion opposite a surface of the step portion.