| CPC G11C 29/12015 (2013.01) [G11C 29/1201 (2013.01)] | 24 Claims |

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1. A memory device, comprising:
internal clock generation circuitry configured to receive a first set of system clock signals from a host device and configured to generate a first internal clock signal based at least in part on the first set of system clock signals, the first internal clock signal associated with a first set of termination values;
phase generation circuitry configured to generate a first loopback signal based at least in part on the first internal clock signal;
a first loopback path configured to transmit the first loopback signal to enable the host device to determine a new set of termination values; and
one or more mode registers configured to select the new set of termination values, wherein the internal clock generation circuitry is configured to generate a second internal clock signal associated with the new set of termination values.
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