US 12,260,922 B2
Semiconductor device for writing to a storage element
Hiroshige Hirano, Nara (JP); Hiroaki Kuriyama, Toyama (JP); Masahiko Sakagami, Kyoto (JP); Micha Gutman, Haifa (IL); Erez Sarig, Kadima (IL); and Yakov Roizin, Afula (IL)
Assigned to TOWER PARTNERS SEMICONDUCTOR CO., LTD., Uozu (JP); and TOWER SEMICONDUCTOR LTD., Migdal Haemek (IL)
Filed by TOWER PARTNERS SEMICONDUCTOR CO., LTD., Uozu (JP); and TOWER SEMICONDUCTOR LTD., Migdal Haemek (IL)
Filed on Mar. 14, 2023, as Appl. No. 18/121,466.
Application 18/121,466 is a continuation of application No. PCT/JP2020/035503, filed on Sep. 18, 2020.
Prior Publication US 2023/0238070 A1, Jul. 27, 2023
Int. Cl. G11C 17/00 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01)
CPC G11C 17/18 (2013.01) [G11C 17/16 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a storage element write unit, wherein
the storage element write unit is constituted by a storage element and a write controller, the storage element being configured to be electrically written only once, the write controller being configured to perform a write to the storage element,
the write controller is controlled based on a write control signal, and is constituted by a write driver, a write driver controller, and a write state detection circuit,
the storage element and the write driver are connected to each other through a first node signal between a power supply voltage source and a ground voltage source,
a second node signal that is an output from the write driver controller is input to the write driver,
the write state detection circuit outputs a third node signal as a detection signal, the third node signal being input to the write driver controller,
the write state detection circuit includes a signal level detection circuit, the first node signal being input to the signal level detection circuit, the signal level detection circuit being configured to output a fourth node signal, the third node signal being output as an output from the fourth node signal, and
in a case where a blown state of the storage element is detected based on the first node signal for detecting a write state of the storage element after start of a write to the storage element, write operation to the storage element is stopped after a lapse of a predetermined time from detection of the blown state.