US 12,260,909 B2
Method of operating selector device, method of operating nonvolatile memory apparatus using the same, electronic circuit device including selector device, and nonvolatile memory apparatus
Tae Jung Ha, Icheon (KR); Soo Gil Kim, Icheon (KR); Jeong Hwan Song, Icheon (KR); Byung Joon Choi, Seoul (KR); and Ha Young Lee, Seoul (KR)
Assigned to SK hynix Inc., Icheon (KR); FOUNDATION FOR RESEARCH AND BUSINESS, SEOUL NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY, Seoul (KR); and INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS, Ansan (KR)
Filed by SK hynix Inc., Icheon (KR); Foundation for Research and Business, Seoul National University of Science and Technology, Seoul (KR); and INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS, Ansan (KR)
Filed on Mar. 22, 2023, as Appl. No. 18/188,332.
Claims priority of application No. 10-2022-0036253 (KR), filed on Mar. 23, 2022.
Prior Publication US 2023/0326523 A1, Oct. 12, 2023
Int. Cl. G11C 7/00 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01)
CPC G11C 13/003 (2013.01) [G11C 11/1659 (2013.01); G11C 2213/72 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A method of operating a selector device of a memory element, comprising:
applying a main operating voltage pulse to a switching layer of the selector device through first and second electrodes of the selector device, a magnitude of a voltage of the main operating voltage pulse being greater than or equal to a magnitude of a threshold voltage for turning on the selector device; and
applying a refresh voltage pulse having a polarity opposite to that of the main operating voltage pulse to the switching layer through the first and second electrodes, a maximum magnitude of a voltage of the refresh voltage pulse being less than the magnitude of the threshold voltage.