| CPC G11C 11/4074 (2013.01) | 4 Claims |

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1. A semiconductor memory module receiving a source voltage and a voltage regulation command signal from a semiconductor memory control unit to perform electrical operation comprising:
a dynamic random access memory (DRAM) array; and
a power management unit supplying a cell array voltage to the DRAM array, wherein
the power management unit includes:
a reference voltage generator receiving the source voltage from a source voltage supplier of the semiconductor memory control unit to generate a reference voltage (Vref);
a voltage regulation controller receiving the voltage regulation command signal from a voltage regulation commander of the semiconductor memory control unit to generate a control signal;
an internal voltage generator receiving the reference voltage from the reference voltage generator and receiving the control signal from the voltage regulation controller to generate a cell array reference voltage (VrefA);
an internal voltage driver receiving the cell array reference voltage (VrefA) from the internal voltage generator and stabilizing the cell array reference voltage (VrefA) to supply a cell array voltage (VDDA) to the DRAM array; and
a voltage compensation unit receiving the cell array voltage (VDDA) by feedback to transmit a compensation command signal to the voltage regulation controller, and
the voltage compensation unit includes:
a voltage measurer receiving the cell array voltage (VDDA) by feedback to measure a voltage value and outputting a measurement voltage value;
a voltage comparator receiving the measurement voltage value, and comparing the measurement voltage value and a reference voltage value acquired based on the voltage regulation command signal received from the voltage regulation commander to output a comparison signal; and
a voltage compensation commander receiving the comparison signal and transmitting the compensation command signal to the voltage regulation controller based on the comparison signal.
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