US 12,260,891 B2
MFMFET, MFMFET array, and the operating method thereof
Tuo-Hung Hou, Hsinchu (TW); and Ming-Hung Wu, Hsinchu (TW)
Assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu (TW)
Filed by National YANG MING Chiao Tung University, Hsinchu (TW)
Filed on Nov. 7, 2022, as Appl. No. 17/982,156.
Claims priority of application No. 111128451 (TW), filed on Jul. 28, 2022.
Prior Publication US 2024/0038287 A1, Feb. 1, 2024
Int. Cl. G11C 11/22 (2006.01)
CPC G11C 11/223 (2013.01) [G11C 11/2259 (2013.01); G11C 11/2273 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A metallic ferroelectric metal (MFM) field effect transistor (FET) comprising:
an MFM having a first electrode and a second electrode;
a first FET electrically connected to the first electrode and having a first gate electrode, wherein the first gate electrode has a first area; and
a second FET electrically connected to the first electrode and having a second gate electrode, a second drain electrode and a second source electrode;
a word line directly and electrically connected to the second electrode;
a bit read line electrically connected to the second drain electrode; and
a source line electrically connected to the second source electrode, wherein:
the second gate electrode has a second area, and
the first area and the second area have a ratio therebetween ranging from 1:50 to 1:2.