| CPC G06F 30/392 (2020.01) [G06F 30/398 (2020.01); G06F 2119/18 (2020.01)] | 20 Claims |
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1. A pattern layout design method, comprising:
creating a first corrected layout through grid snapping for an oblique edge of a mask layout designed on a grid layout, the grid layout including a plurality of reference points arranged in a grid; and
performing optical proximity correction for the first corrected layout, thereby creating a second corrected layout,
wherein the creating the first corrected layout includes:
creating a first divisional point dividing the oblique edge,
discriminating whether or not the first divisional point overlaps with one of the plurality of reference points,
grid-snapping the first divisional point when the first divisional point does not overlap with any one of the plurality of reference points, thereby creating a first correction edge and a first residual edge,
discriminating whether or not a number of created divisional points corresponds to a predetermined number,
creating a second divisional point dividing the first residual edge when the number of created divisional points does not correspond to the predetermined number,
discriminating whether or not the second divisional point overlaps with one of the plurality of reference points, and
grid-snapping the second divisional point when the second divisional point does not overlap with any one of the plurality of reference points, thereby creating a second correction edge and a second residual edge.
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