US 12,260,129 B2
Tracking and updating read command voltage thresholds in solid-state drives
Ofir Kanter, Haifa (IL); and Avi Steiner, Haifa (IL)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 21, 2023, as Appl. No. 18/124,407.
Prior Publication US 2024/0319875 A1, Sep. 26, 2024
Int. Cl. G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01)
CPC G06F 3/0679 (2013.01) [G06F 3/061 (2013.01); G06F 3/0659 (2013.01); G06F 11/1068 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method performed by a controller of a non-volatile memory device for adjusting a read voltage threshold used to read data from a plurality of memory dies of the non-volatile memory device in communication with the controller, each of the memory dies comprising a plurality of blocks, the method comprising:
reading, from a first block of the plurality of blocks, data corresponding to a read command received from a host;
determining a bit error rate for the first block based on the data; and
updating the read voltage threshold for the first block when the bit error rate for the first block exceeds a first error threshold, the read voltage threshold being stored in the controller.