| CPC G06F 3/0659 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0679 (2013.01)] | 11 Claims |
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1. A method for performing data access control of a memory device with aid of predicted information, the method being applied to a memory controller of the memory device, the memory device comprising the memory controller and a non-volatile (NV) memory, the NV memory comprising at least one NV memory element, the method comprising:
receiving a plurality of host commands from a host device, for performing data access on the NV memory according to the plurality of host commands, wherein the data access comprises data reading; and
performing a reading parameter learning procedure to generate predicted data of a predicted reading voltage parameter offset regarding adjustment of a reading voltage parameter, for maintaining correctness of the data reading, wherein the reading parameter learning procedure comprises:
scanning for a best value regarding the adjustment of the reading voltage parameter, and adding latest information comprising the best value into a data set among one or more data sets in at least one reading-voltage control database;
performing local linear regression according to the data set to update a reading voltage prediction function corresponding to a reading voltage prediction model, for fitting a local curve of the predicted reading voltage parameter offset into a corresponding local trend of the data set; and
generating or updating the predicted data of the predicted reading voltage parameter offset according to the reading voltage prediction function;
wherein the reading parameter learning procedure is integrated into a read retry procedure, and the memory controller is arranged to perform both of read retry and reading parameter learning in the read retry procedure.
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