US 12,260,094 B2
Memory system and method of operating thereof, and computer-readable storage medium
Fanya Bi, Wuhan (CN); Xing Wang, Wuhan (CN); Hua Tan, Wuhan (CN); Zhe Sun, Wuhan (CN); Bo Yu, Wuhan (CN); and Guangyao Han, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Nov. 20, 2023, as Appl. No. 18/514,409.
Application 18/514,409 is a continuation of application No. PCT/CN2023/113895, filed on Aug. 18, 2023.
Prior Publication US 2025/0060884 A1, Feb. 20, 2025
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0616 (2013.01) [G06F 3/0658 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system, comprising:
a non-volatile memory, comprising:
a plurality of storage areas, each of the storage areas comprising:
a plurality of first storage groups located in a first area; and
a plurality of second storage groups located in a second area, the first area supporting physical addressing, and the second area not supporting physical addressing; and
a memory controller coupled to the non-volatile memory and configured to:
perform a wear leveling process by swapping a first storage group having a first group write count with a second storage group having a second group write count,
wherein the first group write count is a maximum group write count among a plurality of group write counts corresponding to the plurality of first storage groups, and
wherein the second group write count is a minimum group write count among a plurality of group write counts corresponding to the plurality of second storage groups.