US 12,260,089 B2
Processing-in-memory device based on spin orbit torque device
Jongsun Park, Seoul (KR); TaeHwan Kim, Seoul (KR); and Yunho Jang, Seoul (KR)
Assigned to Korea University Research and Business Foundation, Seoul (KR)
Filed by Korea University Research and Business Foundation, Seoul (KR)
Filed on Jan. 4, 2023, as Appl. No. 18/093,053.
Claims priority of application No. 10-2022-0045977 (KR), filed on Apr. 13, 2022.
Prior Publication US 2023/0333747 A1, Oct. 19, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0613 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0673 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A processing-in-memory device, comprising:
a weight storage array including a plurality of weight storage cells, each of which includes a magnetic tunnel junction (MTJ) device having resistance determined depending on a magnetization direction and in each of which a first input signal having one of logic values depending on the resistance is applied through a bit line;
a product operation array including a plurality of product operation cells, each of which reads out the first input signal from at least one weight storage cell among the plurality of weight storage cells and performs a product operation of the first input signal and a second input signal applied through a voltage application line; and
a sum operation array including a plurality of sum operation cells, each of which reads out a result signal of a product operation from at least one product operation cell among the plurality of product operation cells and performs a sum operation on the result signal of the product operation, wherein the weight storage array, the product operation array, and the sum operation array are connected to each other through a calculation line to perform a multiply accumulation (MAC) operation.