US 12,259,778 B2
Memory system determining a degraded word line based on fail bit count and operating method thereof
Gi Bbeum Han, Icheon (KR)
Assigned to SK Hynix Inc., Icheon (KR)
Filed by SK hynix Inc., Icheon (KR)
Filed on Nov. 1, 2022, as Appl. No. 18/051,767.
Claims priority of application No. 10-2022-0062172 (KR), filed on May 20, 2022.
Prior Publication US 2023/0376370 A1, Nov. 23, 2023
Int. Cl. G06F 11/07 (2006.01); G11C 29/02 (2006.01); G11C 29/08 (2006.01); G11C 29/44 (2006.01); G11C 29/52 (2006.01)
CPC G06F 11/076 (2013.01) [G06F 11/073 (2013.01); G11C 29/025 (2013.01); G11C 29/08 (2013.01); G11C 29/44 (2013.01); G11C 29/52 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for operating a memory system, comprising:
performing, in a memory cell array in which a plurality of word lines and a plurality of bit lines intersect with each other, a word line verification by deactivating each of the plurality of word lines and at the same time performing a bit line equalization;
determining a fail bit count for each of the plurality of word lines according to a number of bit flips that occurred in memory cells corresponding with that word line during the word line verification; and
determining a degraded word line on the basis of fail bit counts of the plurality of word lines,
wherein determining the degraded word line comprises:
determining whether a second word line selected from among the plurality of word lines satisfies a first condition, the first condition being satisfied for a word line when a fail bit count of that word line is larger than a first threshold count;
determining whether the second word line satisfies a second condition, the second condition being satisfied for a word line when the fail bit count of that word line is larger than a sum of a second threshold count and a maximum fail bit count between fail bit counts of word lines adjacent to that word line; and
determining whether the second word line is the degraded word according to whether the second word line satisfies both the first and second condition.