US 12,259,663 B2
Template, method for fabricating template, and method for fabricating semiconductor device
Toshiaki Komukai, Kanagawa (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 11, 2021, as Appl. No. 17/399,854.
Claims priority of application No. 2020-136343 (JP), filed on Aug. 12, 2020.
Prior Publication US 2022/0050392 A1, Feb. 17, 2022
Int. Cl. G03F 7/075 (2006.01); G03F 7/20 (2006.01); G03F 9/00 (2006.01); H01L 21/027 (2006.01)
CPC G03F 9/7042 (2013.01) [G03F 7/075 (2013.01); G03F 7/2012 (2013.01); H01L 21/027 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A template comprising:
a base material having a principal surface;
a mesa structure disposed on the principal surface and having a first surface; and
a silicon film is disposed on the first surface of the mesa structure, the silicon film (i) having a projection-and-depression pattern, (ii) containing a material different from a material for the base material, and (iii) having a second surface directly contacting the first surface, wherein the silicon film contains monocrystalline or polycrystalline silicon.