| CPC G03F 1/24 (2013.01) [H01L 21/0274 (2013.01)] | 19 Claims |
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1. A method comprising:
preparing a mask blank, the mask blank comprising a substrate, a reflective layer disposed on the substrate for reflecting extreme ultraviolet light, and a light absorbing layer disposed on the reflective layer;
providing a photomask by forming a plurality of pattern elements having a target critical dimension from the light absorbing layer, wherein the plurality of pattern elements comprise a correction target pattern element to be corrected, and the correction target pattern element has a critical dimension different from the target critical dimension;
identifying a portion of the photomask in which the correction target pattern element is disposed as a correction target area;
applying an etchant to the photomask; and
locally irradiating a laser beam to the correction target area while the etchant is provided on the photomask.
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