US 12,259,604 B2
Silicon-based optical device and method of fabricating the same
Wen-Shun Lo, Hsinchu County (TW); Jing-Hwang Yang, Hsinchu County (TW); and Yingkit Felix Tsui, Cupertino, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Mar. 28, 2023, as Appl. No. 18/191,859.
Prior Publication US 2024/0329435 A1, Oct. 3, 2024
Int. Cl. G02F 1/01 (2006.01); G02B 6/12 (2006.01); H01L 21/762 (2006.01)
CPC G02F 1/0147 (2013.01) [G02F 1/011 (2013.01); G02B 6/12033 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12083 (2013.01); G02B 2006/12135 (2013.01); G02F 2201/122 (2013.01); H01L 21/762 (2013.01)] 20 Claims
OG exemplary drawing
 
15. A silicon-based optical device, comprising:
a silicon-on-insulator (SOI) substrate;
at least one optical component formed within the SOI substrate; and
a thermal tuning member disposed over the optical components and comprising:
a core;
a pair of neck portions connected to the core; and
a plurality of grids connected to the pair of neck portions, wherein each of the plurality of grids comprises:
a plurality of strips, equally spaced and parallel to one another; and
a connecting portion connecting the plurality of strips to the pair of neck portions.