US 12,259,578 B2
Photonic semiconductor device and method of manufacture
Hsing-Kuo Hsia, Jhubei (TW); Chen-Hua Yu, Hsinchu (TW); Kuo-Chiang Ting, Hsinchu (TW); and Shang-Yun Hou, Jubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/358,749.
Application 17/818,845 is a division of application No. 17/226,542, filed on Apr. 9, 2021, granted, now 11,592,618, issued on Feb. 28, 2023.
Application 18/358,749 is a continuation of application No. 17/818,845, filed on Aug. 10, 2022, granted, now 11,747,563.
Claims priority of provisional application 63/061,363, filed on Aug. 5, 2020.
Claims priority of provisional application 63/037,061, filed on Jun. 10, 2020.
Prior Publication US 2023/0393336 A1, Dec. 7, 2023
Int. Cl. G02B 6/12 (2006.01); G02B 6/124 (2006.01); G02B 6/13 (2006.01)
CPC G02B 6/13 (2013.01) [G02B 6/12002 (2013.01); G02B 6/124 (2013.01); G02B 2006/12107 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package comprising:
a semiconductor substrate;
a first dielectric layer on the semiconductor substrate;
a first dielectric region extending through the semiconductor substrate and physically contacting the first dielectric layer;
a second dielectric region extending through the semiconductor substrate and physically contacting the first dielectric layer, wherein the second dielectric region is separated from the first dielectric region by the semiconductor substrate, wherein the second dielectric region and the first dielectric layer have coplanar sidewalls;
a waveguide on the first dielectric layer, wherein the first dielectric region and the second dielectric region overlap the waveguide;
a redistribution structure over the waveguide; and
an electronic die bonded to the redistribution structure.