| CPC G01N 21/956 (2013.01) [G01N 2201/0636 (2013.01)] | 5 Claims |
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1. A light-source apparatus comprising:
a first light source configured to generate visible light in a wavelength range of 466 nm to 472 nm;
a first external resonator including a plurality of optical mirrors;
a BBO crystal disposed in the first external resonator, capable of generating UV (UltraViolet) light in a wavelength range of 233 nm to 236 nm, the UV light being a second harmonic of the visible light;
a one- or two-dimensional semiconductor sensor disposed near a far-field image plane formed through an optical element provided on an optical path of the UV light;
a calculation unit configured to calculate a representative position of a light intensity distribution detected by the semiconductor sensor;
a temperature control unit configured to adjust a temperature of the BBO crystal so that the representative position is confined within a predetermined range;
a second light source configured to generate IR (InfraRed) light in a wavelength range of 1,071 nm to 1,138 nm;
a second external resonator including a plurality of optical mirrors;
a CLBO crystal disposed in the second external resonator and capable of generating deep UV light having a wavelength of about 193 nm, the deep UV light being sum-frequency-mixed light of the UV light and the IR light;
a condensing lens configured to concentrate the UV light in the CLBO crystal; and
a beam splitter disposed between the condensing lens and the CLBO crystal, configured to take out UV light incident on the semiconductor sensor, wherein
an initial value of the representative position is set so that an output of the deep UV light is maximized.
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