CPC G01N 21/6428 (2013.01) [C12Q 1/6869 (2013.01); C12Q 1/6874 (2013.01); G01N 21/6408 (2013.01); G01N 21/6454 (2013.01); G01N 21/648 (2013.01); G01N 21/6486 (2013.01); G01N 21/7743 (2013.01); G01N 33/54373 (2013.01); G01N 2021/6419 (2013.01); G01N 2021/6421 (2013.01)] | 20 Claims |
1. An integrated device, comprising:
a trench region recessed from a portion of a surface of the integrated device;
a plurality of sample wells disposed within the trench region and recessed from a bottom surface of the trench region;
a plurality of waveguides coupled to the plurality of sample wells;
a grating coupler;
a plurality of output slices coupled to the grating coupler at a side of the grating coupler, coupled to the plurality of waveguides, and each output slice of the plurality of output slices has a first width at the side of the grating coupler and a second width at a location distal the grating coupler, wherein the first width is not uniform across each of the plurality of output slices, and the second width is uniform across each of the output slices and is less than the first width; and
at least two metal layers formed in the integrated device and interconnected with a conductive via.
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