CPC G01N 21/6428 (2013.01) [C12Q 1/6869 (2013.01); C12Q 1/6874 (2013.01); G01N 21/6408 (2013.01); G01N 21/6454 (2013.01); G01N 21/648 (2013.01); G01N 21/6486 (2013.01); G01N 21/7743 (2013.01); G01N 33/54373 (2013.01); G01N 2021/6419 (2013.01); G01N 2021/6421 (2013.01)] | 18 Claims |
1. An integrated device comprising:
a substrate;
a cladding layer disposed on the substrate;
a waveguide, disposed in the cladding layer, having a first side facing the substrate and a second side opposite the first side;
a plurality of metal layers, disposed in the cladding layer, wherein a first metal layer of the plurality of metal layers is positioned at a distance closer to the substrate than the first side of the waveguide and the waveguide is positioned at a distance closer to the substrate than a second metal layer of the plurality of metal layers;
a conductive via connecting adjacent metal layers of the plurality of metal layers; and
an array of sample wells, disposed in the cladding layer, wherein a sample well of the array of sample wells is configured to receive a sample.
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