	US 12,258,661 B2
	Device and method for producing layers with improved uniformity in coating systems with horizontally rotating substrate and additional plasma sources
Michael Vergöhl, Braunschweig (DE); Andreas Pflug, Braunschweig (DE); Tobias Zickenrott, Braunschweig (DE); and Stefan Bruns, Braunschweig (DE)
Assigned to Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V., Munich (DE)
Appl. No. 17/760,310
Filed by FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V., Munich (DE)
PCT Filed Feb. 12, 2021, PCT No. PCT/EP2021/053428 § 371(c)(1), (2) Date Aug. 8, 2022, PCT Pub. No. WO2021/160786, PCT Pub. Date Aug. 19, 2021.
Claims priority of application No. 10 2020 201 829.4 (DE), filed on Feb. 13, 2020.
Prior Publication US 2023/0067917 A1, Mar. 2, 2023
Int. Cl. C23C 14/54 (2006.01); C23C 14/00 (2006.01); C23C 14/35 (2006.01); C23C 14/50 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01)

CPC C23C 14/351 (2013.01) [C23C 14/0036 (2013.01); C23C 14/357 (2013.01); C23C 14/505 (2013.01); C23C 14/547 (2013.01); H01J 37/32201 (2013.01); H01J 37/32366 (2013.01); H01J 37/32715 (2013.01); H01J 37/3405 (2013.01); H01J 37/3476 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/332 (2013.01)]

21 Claims

1. A device for depositing uniform layers on rotationally moved substrates by means of magnetron sputtering comprising

(a) a vacuum chamber with a sputtering compartment,

(b) at least one inlet for a sputtering gas;

(d) at least one magnetron sputtering source arranged in the sputtering compartment with at least one electrode, and

at least one further microwave plasma source being arranged in the sputtering compartment; and

wherein the at least one microwave plasma source for local plasma compression is arranged asymmetrically to one of the axes of the at least one electrode, and wherein the at least one microwave plasma source is placed at an end of the at least one magnetron sputtering source.