| CPC C09K 11/883 (2013.01) [C09K 11/70 (2013.01); H10K 50/115 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H10K 59/38 (2023.02)] | 19 Claims |

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1. A semiconductor nanoparticle comprising:
a central portion including at least one of i) InP, ii) a ternary compound consisting of indium, phosphorus, and one element of Groups I-VII, and iii) InP doped with at least one transition metal of Groups I-VII;
an inner portion proximate to the central portion and including a phosphide of at least one of boron, aluminum, and gallium;
a middle portion proximate to the inner portion and including at least one of ZnSe and ZnSexS1-x; and
an outer portion proximate to the middle portion and including one or more compounds of Groups II-VI, wherein
the middle portion comprises a middle shell including multi-layered shells and further includes, in a portion thereof adjacent to the inner portion, a doping layer containing at least one of ZnSe and ZnSexS1-x which are doped with at least one metal of B, Al, and Ga, and
xis 0<x<1.
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