| CPC C09K 11/621 (2013.01) [C08J 5/18 (2013.01); C09K 11/025 (2013.01); G02B 1/002 (2013.01); G02F 1/133603 (2013.01); G02F 1/133614 (2021.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C08J 2329/10 (2013.01); G02F 2202/36 (2013.01)] | 17 Claims |

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1. Nanostructures comprising:
Ag, In, Ga, and S (AIGS); and
at least one ligand,
wherein the nanostructures comprise a gradient of more gallium at a surface of the nanostructures to less gallium in a center of the nanostructures;
wherein the nanostructures have a peak emission wavelength (PWL) between 480 and 545 nm;
wherein the nanostructures have an emission spectrum with a full width half maximum (FWHM) of less than 40 nm; and
wherein the nanostructures have an emission quantum yield (QY) of 80 to 99.9%.
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