US 12,258,505 B2
Gallium indium nitride nanocrystals
Richard R. Lunt, III, Williamston, MI (US); Rebecca J. Anthony, Lansing, MI (US); Alexander H. Ho, St. Johns, MI (US); and Rajib Mandal, San Jose, CA (US)
Assigned to Board of Trustees of Michigan State University, East Lansing, MI (US)
Appl. No. 17/764,629
Filed by Board of Trustees of Michigan State University, East Lansing, MI (US)
PCT Filed Sep. 28, 2020, PCT No. PCT/US2020/053167
§ 371(c)(1), (2) Date Mar. 29, 2022,
PCT Pub. No. WO2021/062414, PCT Pub. Date Apr. 1, 2021.
Claims priority of provisional application 62/907,683, filed on Sep. 29, 2019.
Prior Publication US 2022/0356395 A1, Nov. 10, 2022
Int. Cl. C09K 11/62 (2006.01); C01B 21/06 (2006.01); H10K 30/35 (2023.01); H10K 50/115 (2023.01)
CPC C09K 11/62 (2013.01) [C01B 21/0602 (2013.01); H10K 30/35 (2023.02); H10K 50/115 (2023.02)] 33 Claims
OG exemplary drawing
 
1. A method of making nanoparticles comprising a semiconducting nitride, the method comprising:
reacting precursors in a gas phase to form the nanoparticles comprising the semiconducting nitride, the precursors comprising at least one of a gallium (Ga) precursor or an indium (In) precursor, and a nitrogen (N) precursor,
wherein the semiconducting nitride is In1−xGaxN, where 0≤x<1.