US 12,258,492 B2
Polishing composition, polishing method, and method for manufacturing substrate
Jingzhi Chen, Taiwan (CN)
Assigned to FUJIMI INCORPORATED, Aichi (JP)
Filed by FUJIMI INCORPORATED, Aichi (JP)
Filed on Oct. 6, 2023, as Appl. No. 18/377,466.
Application 18/377,466 is a division of application No. 17/096,358, filed on Nov. 12, 2020, abandoned.
Claims priority of application No. 2019-209538 (JP), filed on Oct. 20, 2019.
Prior Publication US 2024/0043720 A1, Feb. 8, 2024
Int. Cl. C09G 1/02 (2006.01); C09K 13/00 (2006.01); H01L 21/321 (2006.01)
CPC C09G 1/02 (2013.01) [C09K 13/00 (2013.01); H01L 21/3212 (2013.01)] 13 Claims
 
1. A polishing method comprising:
polishing an object to be polished using a polishing composition, wherein the polishing composition consists of: polishing abrasive grains, an additive molecule, a pH adjusting agent and a dispersing medium; or
polishing abrasive grains, an additive molecule, a pH adjusting agent, a dispersing medium, and one other component;
wherein the polishing abrasive grains contains silica particles with a silanol group density on its surface of 0 to 3.0 groups/nm2, wherein the silanol group density is calculated and determined based on the specific surface area measured by a BET method and from an amount of silanol groups measured by titration;
wherein the additive molecule has a structure represented by Formula (I):

OG Complex Work Unit Chemistry
wherein in Formula (I),
R1 and R2 are each independently H, a C1 to C18 linear alkyl group, a C3 to C18 branched alkyl group, or a C2 to C18 linear alkenyl group;
n is an integer of 2 to 40; and
m, p, and q are each independently 0 or 1, r is an integer of 0 to 2, R1 is a C1 to C18 linear alkyl group, a C3 to C18 branched alkyl group, or a C2 to C18 linear alkenyl group when m is 1, and R2 is a C1 to C18 linear alkyl group, a C3 to C18 branched alkyl group, or a C2 to C18 linear alkenyl group when p is 1;
wherein the pH adjusting agent is used to adjust a pH of the polishing composition to a range of 2.1 or more and 3.9 or less;
wherein the one other component is one or more selected from the group consisting of an oxidizing agent, a metal anticorrosive, an antiseptic agent, and an antifungal agent; and
wherein a material for the object to be polished includes an oxide and a silicon-containing material, wherein
the silicon-containing material is represented by SixGe1-x where x=0.1 to 1, and
wherein the polishing method has a ratio value R1/R2 of the first removal rate (R1) to the second removal rate (R2) of 10 or more when a polishing pressure is 1.0 psi, wherein the first removal rate R1 is the removal rate of the polishing composition with respect to the oxide and the second removal rate R2 is a removal rate of the polishing composition with respect to the silicon-containing material.