US 12,258,270 B2
Group-III nitride semiconductor nanoparticles, core-shell-type particles, and method for manufacturing same
Takuya Kazama, Tokyo (JP); Wataru Tamura, Tokyo (JP); Yasuyuki Miyake, Tokyo (JP); Kenji Moriyama, Tokyo (JP); Atsushi Muramatsu, Sendai (JP); and Kiyoshi Kanie, Sendai (JP)
Assigned to STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Appl. No. 18/028,594
Filed by STANLEY ELECTRIC CO., LTD., Tokyo (JP)
PCT Filed Sep. 13, 2021, PCT No. PCT/JP2021/033494
§ 371(c)(1), (2) Date Mar. 27, 2023,
PCT Pub. No. WO2022/070854, PCT Pub. Date Apr. 7, 2022.
Claims priority of application No. 2020-164723 (JP), filed on Sep. 30, 2020.
Prior Publication US 2023/0357011 A1, Nov. 9, 2023
Int. Cl. C01B 21/072 (2006.01); H01L 29/20 (2006.01)
CPC C01B 21/072 (2013.01) [H01L 29/2003 (2013.01); C01P 2002/70 (2013.01); C01P 2004/64 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method for manufacturing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less, the method comprising:
forming a precursor by treating trimethylindium with a coordination solvent; and
after forming the precursor, synthesizing h Group-III nitride semiconductor nanoparticles having the particle size of 16 nm or less, the synthesizing comprising reacting one or more Group-III elements, including the precursor, with a metal amide as a nitrogen material, at a temperature of 100° C. or higher in a liquid phase wherein, in the synthesizing, the one or more Group-III elements further include at least one of trimethylgallium and trimethylaluminum.