US 12,258,268 B2
Method for purifying hydrogen peroxide
Deokyun Kim, Gyeonggi-do (KR); Hyejin Kim, Gyeonggi-do (KR); Kyungyeol Kim, Gyeonggi-do (KR); and Yongil Kim, Gyeonggi-do (KR)
Assigned to OCI COMPANY LTD., Seoul (KR)
Appl. No. 17/269,006
Filed by OCI COMPANY LTD., Seoul (KR)
PCT Filed Jan. 25, 2019, PCT No. PCT/KR2019/001135
§ 371(c)(1), (2) Date Feb. 2, 2022,
PCT Pub. No. WO2020/036274, PCT Pub. Date Feb. 20, 2020.
Claims priority of application No. 10-2018-0096017 (KR), filed on Aug. 17, 2018.
Prior Publication US 2023/0242400 A1, Aug. 3, 2023
Int. Cl. C01B 15/013 (2006.01); B01D 3/14 (2006.01); B01D 15/08 (2006.01); B01D 61/02 (2006.01); B01D 61/42 (2006.01); B01D 61/48 (2006.01); B01D 61/58 (2006.01); B08B 3/08 (2006.01); H01L 21/02 (2006.01)
CPC C01B 15/0135 (2013.01) [B01D 3/145 (2013.01); B01D 15/08 (2013.01); B01D 61/025 (2013.01); B01D 61/42 (2013.01); B01D 61/48 (2013.01); B01D 61/58 (2013.01); B08B 3/08 (2013.01); B01D 2313/221 (2022.08); B01D 2313/40 (2013.01); B01D 2317/025 (2013.01); H01L 21/02041 (2013.01)] 8 Claims
OG exemplary drawing
 
8. A method for manufacturing a semiconductor device, the method comprising:
purifying a crude product of hydrogen peroxide using a primary purification system;
allowing a primarily purified hydrogen peroxide solution to pass through a heat exchanger;
purifying the primarily purified hydrogen peroxide solution using an electrodeionization system; and
performing a cleaning process on a semiconductor substrate using the purified hydrogen peroxide, wherein:
the primary purification system includes at least one from among a distillation system, a resin system, a reverse osmosis system, and a combination system thereof,
the heat exchanger is configured to adjust the temperature of the primarily purified hydrogen peroxide solution to prevent excessive oxygen generation in the electrodeionization system, and
the heat exchanger adjusts the temperature of the primarily purified hydrogen peroxide solution to a range from −20° C. to 20° C.