US 12,258,265 B2
Bonding process for forming semiconductor device structure
Chih-Hang Chang, Taoyuan (TW); I-Shi Wang, Sanxia Township (TW); and Jen-Hao Liu, Zhunan Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jul. 18, 2023, as Appl. No. 18/354,012.
Application 18/354,012 is a continuation of application No. 17/524,140, filed on Nov. 11, 2021, granted, now 11,772,963.
Application 17/524,140 is a continuation of application No. 16/829,196, filed on Mar. 25, 2020, granted, now 11,174,156, issued on Nov. 16, 2021.
Application 16/829,196 is a continuation of application No. 16/123,719, filed on Sep. 6, 2018, granted, now 10,626,010, issued on Apr. 21, 2020.
Claims priority of provisional application 62/591,955, filed on Nov. 29, 2017.
Prior Publication US 2023/0365402 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. B81C 1/00 (2006.01); B81C 3/00 (2006.01)
CPC B81C 1/00238 (2013.01) [B81C 1/00269 (2013.01); B81C 1/00888 (2013.01); B81C 3/005 (2013.01); B81C 2201/013 (2013.01); B81C 2201/0143 (2013.01); B81C 2201/0146 (2013.01); B81C 2203/035 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first substrate comprising a first face, a second face opposite the first face, and one or more movable microelectromechanical system (MEMS) devices between the first face and second face;
a second substrate bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate; and
one or more expansion joints in the second face of the first substrate.