US 12,257,608 B2
Semiconductor processing apparatus and dielectric window cleaning method of semiconductor processing apparatus
Chunming Liu, Beijing (CN)
Assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Appl. No. 17/788,650
Filed by BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
PCT Filed Dec. 16, 2020, PCT No. PCT/CN2020/136654
§ 371(c)(1), (2) Date Jun. 23, 2022,
PCT Pub. No. WO2021/129471, PCT Pub. Date Jul. 1, 2021.
Claims priority of application No. 201911371199.8 (CN), filed on Dec. 26, 2019.
Prior Publication US 2023/0032679 A1, Feb. 2, 2023
Int. Cl. H01J 37/32 (2006.01); B08B 7/00 (2006.01); B08B 13/00 (2006.01)
CPC B08B 7/0035 (2013.01) [B08B 13/00 (2013.01); H01J 37/32091 (2013.01); H01J 37/32119 (2013.01); H01J 37/32183 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/335 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor processing apparatus comprising:
a reaction chamber and a dielectric window arranged in the reaction chamber;
an induction coil and a cleaning electrode both located above the dielectric window, the cleaning electrode being under the induction coil;
a radio frequency (RF) source assembly configured to apply RF power to the induction coil and the cleaning electrode; and
an impedance adjustment assembly electrically connected to the cleaning electrode and being in an on-off connection with an output terminal of the RF source assembly, and the impedance adjustment assembly being configured to adjust an impedance between the output terminal of the RF source assembly and the cleaning electrode to cause the impedance to be greater or smaller than a first predetermined value to disconnect or connect the impedance adjustment assembly and the output terminal of the RF source assembly.