| CPC B06B 1/0292 (2013.01) [B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); B81B 2201/0271 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81C 2203/036 (2013.01); B81C 2203/0792 (2013.01)] | 20 Claims |

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1. A semiconductor device, comprising:
an interconnect structure disposed over a semiconductor substrate;
a dielectric structure disposed over the interconnect structure;
a plurality of cavities disposed in the dielectric structure and disposed in an array comprising rows and columns;
a microelectromechanical system (MEMS) substrate disposed over the dielectric structure, wherein the MEMS substrate defines upper surfaces of the cavities, wherein the MEMS substrate comprises a plurality of movable membranes, and wherein the movable membranes overlie the cavities, respectively; and
a plurality of fluid communication channels disposed in the dielectric structure, wherein upper surfaces of the fluid communication channels are defined by the MEMS substrate, and wherein each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.
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