US 11,937,513 B2
Magnon spin valve, magnon sensor, magnon field effect transistor, magnon tunnel junction and magnon memory
Xiufeng Han, Beijing (CN); Ping Tang, Beijing (CN); Chenyang Guo, Beijing (CN); and Caihua Wan, Beijing (CN)
Assigned to Institute of Physics, Chinese Academy of Sciences, Beijing (CN)
Filed by Institute of Physics, Chinese Academy of Sciences, Beijing (CN)
Filed on Oct. 24, 2020, as Appl. No. 17/079,422.
Application 17/079,422 is a division of application No. 16/225,820, filed on Dec. 19, 2018, abandoned.
Claims priority of application No. 201711415711.5 (CN), filed on Dec. 25, 2017.
Prior Publication US 2021/0043829 A1, Feb. 11, 2021
Int. Cl. H10N 50/80 (2023.01); H01F 10/32 (2006.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [H01F 10/32 (2013.01); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 3 Claims
OG exemplary drawing
 
1. A magnon tunnel junction, comprising:
a first ferromagnetic layer formed of a ferromagnetic insulation material for conducting magnons;
a first antiferromagnetic layer located on the first ferromagnetic layer and formed of an antiferromagnetic insulation material, the first antiferromagnetic layer serving as a barrier layer for magnons; and
a second ferromagnetic layer located on the first antiferromagnetic layer and formed of a ferromagnetic insulation material for conducting magnons,
wherein the ferromagnetic insulation material comprises one or more of the following materials: R3Fe5O12, MFe2O4, BaFe12O19, SrFe12O19, and doped compounds thereof, where R is Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu, and M is Mn, Zn, Cu, Ni, Mg or Co, and
wherein the antiferromagnetic insulation material comprises one or more of the following materials: NiO and CoO.