US 11,937,438 B2
Organic field-effect transistor and fabrication method therefor
Hong Meng, Shenzhen (CN); Yuhao Shi, Shenzhen (CN); Xinwei Wang, Shenzhen (CN); and Lin Ai, Shenzhen (CN)
Assigned to PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL, Shenzhen (CN)
Appl. No. 16/960,420
Filed by PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL, Shenzhen (CN)
PCT Filed Apr. 17, 2020, PCT No. PCT/CN2020/085371
§ 371(c)(1), (2) Date Jul. 7, 2020,
PCT Pub. No. WO2021/208077, PCT Pub. Date Oct. 21, 2021.
Claims priority of application No. 202010307798.X (CN), filed on Apr. 17, 2020.
Prior Publication US 2023/0093494 A1, Mar. 23, 2023
Int. Cl. H01L 21/00 (2006.01); H10K 10/46 (2023.01); H10K 71/12 (2023.01)
CPC H10K 10/471 (2023.02) [H10K 71/12 (2023.02)] 9 Claims
 
1. A fabrication method for an organic field-effect transistor, comprising:
providing a gate;
depositing a polymer material onto the gate and forming a dielectric layer;
performing a supercritical fluid treatment on the gate having the dielectric layer deposited;
depositing an organic semiconductor layer material on the dielectric layer having been processed, and forming an organic semiconductor layer; and
depositing an electrode layer material on the organic semiconductor layer, and forming an electrode layer;
wherein the step of performing the supercritical fluid treatment on the gate having the dielectric layer deposited further comprises:
adopting carbon dioxide as a fluid, placing the gate having the dielectric layer deposited into a reaction kettle, adding a water-removing agent, pressurizing the carbon dioxide to 1500-3000 psi before passing into the reaction kettle, raising a temperature of the reaction kettle to 60-120° C., and keeping for a process period of 30 minutes to 1 hour.