US 11,937,416 B2
Memory device with improved margin and performance and methods of formation thereof
Shih-Hao Lin, Hsinchu (TW); Kian-Long Lim, Hsinchu (TW); Chih-Chuan Yang, Hsinchu (TW); Chia-Hao Pao, Hsinchu (TW); and Jing-Yi Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on May 23, 2022, as Appl. No. 17/750,649.
Application 17/750,649 is a continuation of application No. 17/009,034, filed on Sep. 1, 2020, granted, now 11,342,338.
Claims priority of provisional application 62/906,600, filed on Sep. 26, 2019.
Prior Publication US 2022/0285369 A1, Sep. 8, 2022
Int. Cl. H01L 27/11 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10B 10/00 (2023.01)
CPC H10B 10/125 (2023.02) [H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first transistor that includes a first channel stack having a first number of first channel layers suspended over a substrate, wherein the first channel layers extend along a first lateral direction between first epitaxial source/drain features, the first channel layers have a first channel dimension along a second lateral direction that is different than the first lateral direction, the first epitaxial source/drain features have a first source/drain dimension along the second lateral direction, and the first epitaxial source/drain features have a first volume;
a second transistor that includes a second channel stack having a second number of second channel layers suspended over the substrate, wherein the second channel layers extend along the first lateral direction between second epitaxial source/drain features, the second channel layers have a second channel dimension along the second lateral direction, the second epitaxial source/drain features have a second source/drain dimension along the second lateral direction, and the second epitaxial source/drain features have a second volume; and
wherein the first number of first channel layers is greater than the second number of second channel layers, the first channel dimension is about equal to the second channel dimension, the first source/drain dimension is greater than the second source/drain dimension, and the first volume is greater than the second volume.