CPC H01L 29/7853 (2013.01) [H01L 29/0673 (2013.01); H01L 29/24 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/6681 (2013.01); H01L 21/02568 (2013.01); H01L 21/0262 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a source contact;
a drain contact laterally spaced apart from the source contact; and
a two dimensional (2D) semiconductor channel laterally between the source contact and the drain contact, wherein the 2D semiconductor channel is a shell.
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