CPC H01L 29/41708 (2013.01) [H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/42304 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01)] | 19 Claims |
1. A structure comprising:
a base formed on a semiconductor substrate;
an asymmetrical spacer on the base, the asymmetrical spacer comprising a vertical sidewall directly contacting a first sidewall of the base and an L-shaped sidewall directly contacting another sidewall of the base;
an emitter on a first side of the base and separated from the base by the vertical sidewall of the asymmetrical spacer; and
a collector on a second side of the base and separated from the base by the L-shaped sidewall of the asymmetrical spacer,
wherein the asymmetrical spacer is a single spacer which surrounds the base, wherein the vertical sidewall directly contacts the first sidewall of the base and is adjacent to the emitter and the L-shaped sidewall directly contacts the other sidewall of the base and is adjacent to the collector.
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