CPC H01L 29/41708 (2013.01) [H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/66242 (2013.01); H01L 29/735 (2013.01); H01L 29/737 (2013.01); H01L 29/0808 (2013.01); H01L 29/0817 (2013.01)] | 20 Claims |
1. A structure comprising:
a lateral bipolar transistor comprising an emitter, a base and a collector;
an emitter contact to the emitter;
a base contact to the base; and
a collector contact to the collector and extending to an underlying semiconductor substrate underneath the collector.
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