US 11,935,915 B2
Dielectric thin film, memcapacitor including the same, cell array including the same, and manufacturing method thereof
Sanghan Lee, Gwangju (KR); Hyunji An, Gwangju (KR); and Jiwoong Yang, Gwangju (KR)
Assigned to Gwangji Institute of Science and Technology, Gwangju (KR)
Filed by Gwangju Institute of Science and Technology, Gwangju (KR)
Filed on Aug. 19, 2021, as Appl. No. 17/445,432.
Application 17/445,432 is a division of application No. 16/691,904, filed on Nov. 22, 2019, granted, now 11,158,701.
Claims priority of application No. 10-2019-0146858 (KR), filed on Nov. 15, 2019.
Prior Publication US 2021/0391412 A1, Dec. 16, 2021
Int. Cl. H10N 70/20 (2023.01); H01L 49/02 (2006.01); H10N 70/00 (2023.01)
CPC H01L 28/55 (2013.01) [H01L 28/60 (2013.01); H10N 70/041 (2023.02); H10N 70/24 (2023.02); H10N 70/841 (2023.02); H10N 70/8836 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A memcapacitor comprising:
a first electrode that includes Nb-doped SrTiO3;
a second electrode disposed on the first electrode; and
a dielectric thin film comprising SrMnO3 disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage applied between the first electrode and the second electrode,
wherein a lattice constant of the first electrode is greater than an intrinsic lattice constant of the dielectric thin film,
wherein the variable dielectric constant includes at least three dielectric constants, and
wherein the dielectric thin film is epitaxially grown on the first electrode and receives a tensile force from the first electrode so that the dielectric thin film, as epitaxially grown on the first electrode, has a lattice constant which is extended as compared with the intrinsic lattice constant of the dielectric thin film.