CPC H01L 27/0924 (2013.01) [H01L 21/823807 (2013.01); H01L 25/074 (2013.01); H01L 27/0688 (2013.01); H01L 29/0669 (2013.01); H01L 29/7782 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
1. An integrated circuit (IC) structure, comprising:
a material stack including a first channel material and a second channel material, wherein the first channel material comprises Ge and the second channel material comprises one or more Group III elements and one or more Group V elements;
one or more gate electrodes adjacent to a sidewall of the first and second channel materials; and
source and drain terminals coupled to the first and second channel materials.
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