US 11,935,845 B2
Semiconductor device, preparation method therefor and electrical equipment thereof
Hao Lan, Foshan (CN); and Yuxiang Feng, Foshan (CN)
Assigned to Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd., Foshan (CN); and Midea Group Co., Ltd., Foshan (CN)
Filed by Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd., Foshan (CN); and Midea Group Co., Ltd., Foshan (CN)
Filed on Apr. 19, 2022, as Appl. No. 17/724,416.
Application 17/724,416 is a continuation of application No. PCT/CN2019/125342, filed on Dec. 13, 2019.
Claims priority of application No. 201911054305.X (CN), filed on Oct. 31, 2019.
Prior Publication US 2022/0238462 A1, Jul. 28, 2022
Int. Cl. H01L 29/40 (2006.01); H01L 23/64 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01)
CPC H01L 23/642 (2013.01) [H01L 29/401 (2013.01); H01L 29/41708 (2013.01); H01L 29/41741 (2013.01); H01L 29/41775 (2013.01); H01L 29/6634 (2013.01); H01L 29/7398 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a silicon substrate, wherein an emitter, a gate, and a collector are formed on the silicon substrate;
a bootstrap electrode, formed on the silicon substrate; and
an insulating layer, formed on the silicon substrate and disposed between the emitter and the bootstrap electrode; wherein a bootstrap capacitor is formed between the emitter and the bootstrap electrode, wherein a groove is defined on the silicon substrate, the insulating layer is formed on an inner wall of the groove, and the bootstrap electrode is disposed in the groove.