US 11,935,782 B2
Methods for inhibiting line bending during conductive material deposition, and related apparatus
Gurtej S. Sandhu, Boise, ID (US); Marko Milojevic, Boise, ID (US); John A. Smythe, Boise, ID (US); Timothy A. Quick, Boise, ID (US); and Sumeet C. Pandey, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 7, 2022, as Appl. No. 17/653,790.
Application 17/653,790 is a division of application No. 16/773,636, filed on Jan. 27, 2020, granted, now 11,270,909.
Prior Publication US 2022/0238340 A1, Jul. 28, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/67 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/538 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/76843 (2013.01) [H01L 21/28247 (2013.01); H01L 21/67069 (2013.01); H01L 21/76814 (2013.01); H01L 21/76853 (2013.01); H01L 21/76855 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01); H01L 23/5386 (2013.01); H01L 29/401 (2013.01); H01L 29/4232 (2013.01); H01L 29/66795 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of forming a structure, the method comprising:
forming a pattern of elongate features extending vertically from a base structure;
forming conductive material on the elongate features; and
after completing the forming of the pattern of elongate features, exposing the elongate features, the conductive material, or both to at least one surface treatment gas comprising at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material.