CPC H01L 21/76843 (2013.01) [H01L 21/28247 (2013.01); H01L 21/67069 (2013.01); H01L 21/76814 (2013.01); H01L 21/76853 (2013.01); H01L 21/76855 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01); H01L 23/5386 (2013.01); H01L 29/401 (2013.01); H01L 29/4232 (2013.01); H01L 29/66795 (2013.01)] | 22 Claims |
1. A method of forming a structure, the method comprising:
forming a pattern of elongate features extending vertically from a base structure;
forming conductive material on the elongate features; and
after completing the forming of the pattern of elongate features, exposing the elongate features, the conductive material, or both to at least one surface treatment gas comprising at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material.
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